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TMR- und TAMR-Effekt an (Ga,Mn)As und GaAs Tunnelstrukturen

URN to cite this document: urn:nbn:de:bvb:355-opus-13597

Brinkmeier, Eva (2009) TMR- und TAMR-Effekt an (Ga,Mn)As und GaAs Tunnelstrukturen. PhD, Universität Regensburg

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Abstract (German)

In dieser Arbeit wurden GaAs beziehungsweise (Ga,Mn)As basierte Tunnelstrukturen hinsichtlich des Tunnelmagnetowiderstand (TMR) und anisotropen Tunnelmagnetowiderstand (TAMR) Effekts untersucht. Dabei wird das Hauptaugenmerk auf den relativ neu entdeckten TAMR-Effekt gelegt, welcher eine Abhängigkeit des Tunnelwiderstands von der Orientierung der Magnetisierungsrichtung ...

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Translation of the abstract (English)

This thesis is concerned with the experimental investigation of the tunnel magnetoresistance (TMR) and tunnel anistropic magnetoresistance (TAMR) in GaAs and (Ga,Mn)As tunnel junction. A special emphasis was put on the study of the newly discovered TAMR effect, which consists in the variation of the TMR with the magnetization�s angle. The tunnel junctions were fabricated by means of optical ...

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Item Type:Thesis of the University of Regensburg (PhD)
Date:22 September 2009
Referee:Prof. Dr. Dieter Weiss
Date of exam:30 July 2009
Institutions:Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss
Keywords:Tunnelmagnetowiderstand , Magnetismus , Magnetischer Halbleiter , GaMnAs , GaAs , TAMR , GaMnAs , GaAs , TAMR
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Owner: Universitätsbibliothek Regensburg
Deposited On:18 Jan 2010 14:10
Last Modified:13 Mar 2014 12:39
Item ID:12336
Owner Only: item control page

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