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Quantitative modeling of the annealing-induced changes of the magnetotransport in Ga1−xMnxAs alloys

Michel, C. and Baranovskii, S. D and Thomas, P. and Heimbrodt, W and Elm, M. T. and Klar, P. J. and Goldlücke, B. and Wurstbauer, Ursula and Reinwald, Matthias and Wegscheider, Werner (2007) Quantitative modeling of the annealing-induced changes of the magnetotransport in Ga1−xMnxAs alloys. Journal of Applied Physics 102 (7), 073712.

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Abstract

We study the changes of magnetoresistance induced by controlled thermal annealing at temperatures ranging from 300 to 600 °C of a Ga0.98Mn0.02As alloy grown by low-temperature molecular beam epitaxy. We use a resistor-network model for describing the electrical transport as a function of temperature and external magnetic field. The model is founded on classical semiconductor band transport and ...

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Item Type:Article
Date:11 October 2007
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1063/1.2786556DOI
Related URLs:
URLURL Type
http://link.aip.org/link/?JAPIAU/102/073712/1Publisher
Classification:
NotationType
72.20.My; 72.80.Ey; 75.50.Pp; 75.20.CkPACS
Keywords:annealing, electronic density of states, gallium arsenide, gallium compounds, III-V semiconductors, magnetoresistance, manganese compounds, paramagnetic materials, semimagnetic semiconductors, Zeeman effect
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Owner: Martin Kaiser
Deposited On:25 Jan 2010 13:51
Last Modified:13 Mar 2014 12:42
Item ID:12489
Owner Only: item control page
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