Ciorga, Mariusz and Schlapps, Markus and Einwanger, Andreas and Geißler, Stefan and Sadowski, Janusz and Wegscheider, Werner and Weiss, Dieter
TAMR effect in (Ga,Mn)As-based tunnel structures.
New Journal of Physics 9, p. 351.
We discuss the results of our experiments on tunnel devices based on (Ga,Mn)As structures. Those include p+-(Ga, Mn)As/n+-GaAs Esaki diodes and laterally defined narrow nanoconstrictions in (Ga,Mn)As epilayers. We found in those structures strong anisotropic magnetoresistance behaviour with features that could be attributed to the novel tunnelling anisotropic magnetoresistance effect. We argue however, that in case of nanoconstricted (Ga,Mn)As wires, some other physics has to be additionally employed to fully explain the observed effects.