Khannanov, M. N. and Kukushkin, I. V. and Gubarev, S. I. and Smet, J. H. and Klitzing, Klaus von and Wegscheider, Werner and Gerl, Christian
Hole-density dependence of the cyclotron mass of 2D holes in a GaAs(001) quantum well.
JETP Letters 85 (5), pp. 242-245.
The dependence of the heavy-hole cyclotron mass in GaAs(001) quantum wells on the 2D-hole density has been measured by the optical detection method for resonance microwave by-absorption. A significant increase (almost doubling) has been observed in the cyclotron mass of heavy holes with an increase in the charge carrier density from 1.2 × 1010 cm−2 to 1.3 × 1011 cm−2.