Hertkorn, J. and Brückner, P. and Gao, C. and Scholz, Ferdinand and Chuvilin, A. and Kaiser, U. and Wurstbauer, Ursula and Wegscheider, Werner
Transport properties in n-type AlGaN/AlN/GaN-superlattices.
physica status solidi (c) 5 (6), pp. 1950-1952.
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In order to improve the lateral conductivity in optoelectronic devices, we have investigated Si-doped AlGaN/AlN/GaN-superlattices. As a first step we performed calculations of the band structure of Al-GaN/AlN/GaN modulation doped multi heterostructures. Based on these results we worked on optimizing the growth of low Al content (xAl 20%) superlattices by MOVPE. Several tens of abrupt and graded ...
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