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Transport properties in n-type AlGaN/AlN/GaN-superlattices

Hertkorn, J. and Brückner, P. and Gao, C. and Scholz, Ferdinand and Chuvilin, A. and Kaiser, U. and Wurstbauer, Ursula and Wegscheider, Werner (2008) Transport properties in n-type AlGaN/AlN/GaN-superlattices. physica status solidi (c) 5 (6), pp. 1950-1952.

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In order to improve the lateral conductivity in optoelectronic devices, we have investigated Si-doped AlGaN/AlN/GaN-superlattices. As a first step we performed calculations of the band structure of Al-GaN/AlN/GaN modulation doped multi heterostructures. Based on these results we worked on optimizing the growth of low Al content (xAl 20%) superlattices by MOVPE. Several tens of abrupt and graded ...


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Item Type:Article
Date:April 2008
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Identification Number:
73.21.Cd, 73.40.Kp, 73.61.Ey, 81.05.Ea, 81.15.KkPACS
Subjects:500 Science > 530 Physics
Created at the University of Regensburg:Unknown
Owner: Martin Kaiser
Deposited On:25 Jan 2010 14:01
Last Modified:13 Mar 2014 12:42
Item ID:12501
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