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Laterally defined freely suspended quantum dots in GaAs/AlGaAs heterostructures

Rossler, C. and Bichler, Max and Schuh, Dieter and Wegscheider, Werner and Ludwig, S. (2008) Laterally defined freely suspended quantum dots in GaAs/AlGaAs heterostructures. Nanotechnology 19 (16), p. 165201.

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Abstract

Free-standing beams containing a two-dimensional electron system are shaped from a GaAs/AlGaAs heterostructure. Quantum point contacts and (double) quantum dots are laterally defined using metal top gates. We investigate the electronic properties of these nanostructures by transport spectroscopy. Tunable localized electron states in freely suspended nanostructures are a promising tool to ...

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Item Type:Article
Date:23 April 2008
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1088/0957-4484/19/16/165201DOI
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Owner: Martin Kaiser
Deposited On:25 Jan 2010 14:03
Last Modified:13 Mar 2014 12:43
Item ID:12508
Owner Only: item control page

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