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Quantum dots formed in a GaAs/AlGaAs quantum ring

Mühle, A. and Wegscheider, Werner and Haug, Rolf J. (2008) Quantum dots formed in a GaAs/AlGaAs quantum ring. Applied Physics Letters 92 (1), 013126.

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Abstract

We demonstrate the tunability of a GaAs/AlGaAs quantum ring showing coherent Aharonov-Bohm oscillations up to a gate voltage regime where the ring splits into three quantum dots. This is explained based on the structure's special confinement potential. We characterized the dots by analyzing the corresponding sets of Coulomb blockade lines. Additionally, the spatial configuration of the dots was confirmed by charge measurements using an adjacent quantum point contact.

Item Type:

Article

Institutions:

Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider

Identification Number:

Value	Type
10.1063/1.2833694	DOI

Related URLs:

URL	URL Type
http://link.aip.org/link/?APPLAB/92/013126/1	Publisher

Classification:

Notation	Type
73.21.La; 73.63.Kv; 73.23.Hk	PACS

Keywords:

Aharonov-Bohm effect, aluminium compounds, Coulomb blockade, gallium arsenide, III-V semiconductors, quantum point contacts, semiconductor quantum dots

Subjects:

500 Science > 530 Physics

Status:

Published

Refereed:

Unknown

Created at the University of Regensburg:

Unknown

Owner:

Martin Kaiser

Deposited On:

01 Feb 2010 14:10