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Quantum dots formed in a GaAs/AlGaAs quantum ring

Mühle, A. and Wegscheider, Werner and Haug, Rolf J. (2008) Quantum dots formed in a GaAs/AlGaAs quantum ring. Applied Physics Letters 92 (1), 013126.

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Abstract

We demonstrate the tunability of a GaAs/AlGaAs quantum ring showing coherent Aharonov-Bohm oscillations up to a gate voltage regime where the ring splits into three quantum dots. This is explained based on the structure's special confinement potential. We characterized the dots by analyzing the corresponding sets of Coulomb blockade lines. Additionally, the spatial configuration of the dots was ...

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Item Type:Article
Date:10 January 2008
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1063/1.2833694DOI
Related URLs:
URLURL Type
http://link.aip.org/link/?APPLAB/92/013126/1Publisher
Classification:
NotationType
73.21.La; 73.63.Kv; 73.23.HkPACS
Keywords:Aharonov-Bohm effect, aluminium compounds, Coulomb blockade, gallium arsenide, III-V semiconductors, quantum point contacts, semiconductor quantum dots
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Owner: Martin Kaiser
Deposited On:01 Feb 2010 13:10
Last Modified:13 Mar 2014 12:48
Item ID:12638
Owner Only: item control page
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