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InSitu Reduction of Charge Noise in GaAs/AlxGa1-xAs Schottky-Gated Devices

Buizert, Christo and Koppens, Frank H. L. and Pioro-Ladrière, Michel and Tranitz, Hans-Peter and Vink, Ivo T. and Tarucha, Seigo and Wegscheider, Werner and Vandersypen, Lieven M. K. (2008) InSitu Reduction of Charge Noise in GaAs/AlxGa1-xAs Schottky-Gated Devices. Physical Review Letters 101 (22), p. 226603.

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Abstract

We show that an insulated electrostatic gate can be used to strongly suppress ubiquitous background charge noise in Schottky-gated GaAs/AlGaAs devices. Via a 2D self-consistent simulation of the conduction band profile we show that this observation can be explained by reduced leakage of electrons from the Schottky gates into the semiconductor through the Schottky barrier, consistent with the ...

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Item Type:Article
Date:28 November 2008
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1103/PhysRevLett.101.226603DOI
Related URLs:
URLURL Type
http://link.aps.org/doi/10.1103/PhysRevLett.101.226603Publisher
Classification:
NotationType
85.30.−z, 72.20.Jv, 72.70.+m, 73.23.−bPACS
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Owner: Martin Kaiser
Deposited On:01 Feb 2010 13:16
Last Modified:13 Mar 2014 12:47
Item ID:12644
Owner Only: item control page
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