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Electric-field-induced reversible avalanche breakdown in a GaAs microcrystal due to cross band gap impact ionization

Klappenberger, Florian and Renk, Karl Friedrich and Summer, Raimund Franz and Keldysh, Leonid and Rieder, Bernhard and Wegscheider, Werner (2003) Electric-field-induced reversible avalanche breakdown in a GaAs microcrystal due to cross band gap impact ionization. Applied Physics Letters 83 (4), pp. 704-706.

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Abstract

We report on a reversible avalanche breakdown due to free-carrier multiplication caused by cross band gap impact ionization in a GaAs microcrystal. The n GaAs microcrystal (length 1 µm, diameter 1 µm) was embedded between n+ GaAs layers serving as electric contacts. We guided an electric pulse to the sample and determined, from the reflected and transmitted pulse, the I(V) characteristic. The ...

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Item Type:Article
Date:28 July 2003
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1063/1.1595712DOI
Related URLs:
URLURL Type
http://link.aip.org/link/?APPLAB/83/704/1Publisher
Classification:
NotationType
72.20.Ht; 77.22.Jp; 72.80.Ey; 72.60.+g; 72.20.JvPACS
Keywords:gallium arsenide, impact ionisation, avalanche breakdown, III-V semiconductors, electrical conductivity transitions, semiconductor switches, Gunn effect, electron-hole recombination
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Owner: Martin Kaiser
Deposited On:08 Feb 2010 13:21
Last Modified:13 Mar 2014 12:50
Item ID:12742
Owner Only: item control page
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