Klappenberger, Florian and Renk, Karl Friedrich and Summer, Raimund Franz and Keldysh, Leonid and Rieder, Bernhard and Wegscheider, Werner (2003) Electric-field-induced reversible avalanche breakdown in a GaAs microcrystal due to cross band gap impact ionization. Applied Physics Letters 83 (4), pp. 704-706.
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We report on a reversible avalanche breakdown due to free-carrier multiplication caused by cross band gap impact ionization in a GaAs microcrystal. The n GaAs microcrystal (length 1 µm, diameter 1 µm) was embedded between n+ GaAs layers serving as electric contacts. We guided an electric pulse to the sample and determined, from the reflected and transmitted pulse, the I(V) characteristic. The ...
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|Date:||28 July 2003|
|Institutions:||Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider|
|Keywords:||gallium arsenide, impact ionisation, avalanche breakdown, III-V semiconductors, electrical conductivity transitions, semiconductor switches, Gunn effect, electron-hole recombination|
|Dewey Decimal Classification:||500 Science > 530 Physics|
|Created at the University of Regensburg:||Unknown|
|Deposited on:||08 Feb 2010 13:21|
|Last modified:||13 Mar 2014 12:50|