Klappenberger, Florian and Renk, Karl Friedrich and Summer, Raimund Franz and Keldysh, Leonid and Rieder, Bernhard and Wegscheider, Werner
Electric-field-induced reversible avalanche breakdown in a GaAs microcrystal due to cross band gap impact ionization.
Applied Physics Letters 83 (4), pp. 704-706.
We report on a reversible avalanche breakdown due to free-carrier multiplication caused by cross band gap impact ionization in a GaAs microcrystal. The n GaAs microcrystal (length 1 µm, diameter 1 µm) was embedded between n+ GaAs layers serving as electric contacts. We guided an electric pulse to the sample and determined, from the reflected and transmitted pulse, the I(V) characteristic. The breakdown was indicated by a sudden current rise and voltage drop and a hysteresis effect and, furthermore, by electron-hole recombination radiation. We reached the threshold field for ionization by making use of a high-field domain whose formation was based on the Gunn effect. The microcrystal could reproducibly be switched into the nonequilibrium avalanche state. Our analysis indicates that the effect provides a basis for the development of an ultrafast electric switch.
|Date:||28 July 2003|
|Institutions:|| Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider|
|72.20.Ht; 77.22.Jp; 72.80.Ey; 72.60.+g; 72.20.Jv||PACS|
|Keywords:||gallium arsenide, impact ionisation, avalanche breakdown, III-V semiconductors, electrical conductivity transitions, semiconductor switches, Gunn effect, electron-hole recombination |
|Subjects:||500 Science > 530 Physics|
|Created at the University of Regensburg:||Unknown|
|Deposited On:||08 Feb 2010 13:21|
|Last Modified:||20 Jul 2011 22:19|