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Growth and subband structure determination of high mobility hole gases on (0 0 1) and (1 1 0) GaAs

Gerl, Christian and Bauer, J. and Wegscheider, Werner (2007) Growth and subband structure determination of high mobility hole gases on (0 0 1) and (1 1 0) GaAs. Journal of Crystal Growth 301-30, pp. 145-147.

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We introduce high mobility two-dimensional hole systems (2DHSs) in AlGaAs/GaAs heterosystems grown by molecular beam epitaxy (MBE). Utilizing a carbon filament source, two-dimensional hole gases (2DHGs) were fabricated on the (0 0 1) and (1 1 0) crystal plan. These samples exhibit low-temperature mobilities beyond 106 cm2/V s at densities varying from 0.6 to 2.3×1011 cm−2. In order to explore the ...


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Item type:Article
Date:April 2007
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Identification Number:
72.80.Ey; 73.21.Fg; 73.23.Ad; 73.43.QtPACS
Keywords:A1. Low-dimensional structures; A3. Molecular beam epitaxy; B2. Semiconducting galliumarsenide; B3. Heterojunction semiconductor devices
Dewey Decimal Classification:500 Science > 530 Physics
Created at the University of Regensburg:Unknown
Deposited on:08 Feb 2010 13:24
Last modified:13 Mar 2014 12:50
Item ID:12746
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