Wurstbauer, Ursula and Sperl, Matthias and Schuh, Dieter and Bayreuther, Günther and Sadowski, Janusz and Wegscheider, Werner (2007) GaMnAs grown on (0 0 1), (3 1 1) A and (1 1 0) GAaS substrates: Comparison of growth conditions and post-growth annealing behaviour. Journal of Crystal Growth 301-30, pp. 260-263.
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Thin GaMnAs layers were grown by low temperature molecular beam epitaxy on (0 0 1), (3 1 1) A and (1 1 0) GaAs substrates. In an effort to increase the ferromagnetic transition temperature TC, we studied growth conditions and the effectiveness of post-growth annealing under an arsenic capping layer and in air. Avoiding As antisite defects with a small As to Ga flux ratio during MBE growth and ...
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|Institutions:||Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider|
|Keywords:||A3. Molecular beam epitaxy; B1. GaMnAs; B2. Semiconducting III–IV materials; B3. Spintronic devices|
|Dewey Decimal Classification:||500 Science > 530 Physics|
|Created at the University of Regensburg:||Unknown|
|Deposited on:||08 Feb 2010 13:24|
|Last modified:||13 Mar 2014 12:50|