Wurstbauer, Ursula and Sperl, Matthias and Schuh, Dieter and Bayreuther, Günther and Sadowski, Janusz and Wegscheider, Werner (2007) GaMnAs grown on (0 0 1), (3 1 1) A and (1 1 0) GAaS substrates: Comparison of growth conditions and post-growth annealing behaviour. Journal of Crystal Growth 301-30, pp. 260-263.
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Thin GaMnAs layers were grown by low temperature molecular beam epitaxy on (0 0 1), (3 1 1) A and (1 1 0) GaAs substrates. In an effort to increase the ferromagnetic transition temperature TC, we studied growth conditions and the effectiveness of post-growth annealing under an arsenic capping layer and in air. Avoiding As antisite defects with a small As to Ga flux ratio during MBE growth and reducing Mn interstitials by annealing the GaMnAs films in air for very long time at temperatures far below growth temperature allows us to obtain (0 0 1) samples with TC up to 150 K, (3 1 1) A samples with TC about of 110 K and (1 1 0) samples with TC of 89 K.
|Institutions:||Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider|
|Keywords:||A3. Molecular beam epitaxy; B1. GaMnAs; B2. Semiconducting III–IV materials; B3. Spintronic devices|
|Subjects:||500 Science > 530 Physics|
|Created at the University of Regensburg:||Unknown|
|Deposited On:||08 Feb 2010 13:24|
|Last Modified:||20 Jul 2011 22:19|