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GaMnAs grown on (0 0 1), (3 1 1) A and (1 1 0) GAaS substrates: Comparison of growth conditions and post-growth annealing behaviour

Wurstbauer, Ursula and Sperl, Matthias and Schuh, Dieter and Bayreuther, Günther and Sadowski, Janusz and Wegscheider, Werner (2007) GaMnAs grown on (0 0 1), (3 1 1) A and (1 1 0) GAaS substrates: Comparison of growth conditions and post-growth annealing behaviour. Journal of Crystal Growth 301-30, pp. 260-263.

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Abstract

Thin GaMnAs layers were grown by low temperature molecular beam epitaxy on (0 0 1), (3 1 1) A and (1 1 0) GaAs substrates. In an effort to increase the ferromagnetic transition temperature TC, we studied growth conditions and the effectiveness of post-growth annealing under an arsenic capping layer and in air. Avoiding As antisite defects with a small As to Ga flux ratio during MBE growth and ...

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Item Type:Article
Date:April 2007
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1016/j.jcrysgro.2006.11.197DOI
Keywords:A3. Molecular beam epitaxy; B1. GaMnAs; B2. Semiconducting III–IV materials; B3. Spintronic devices
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Owner: Martin Kaiser
Deposited On:08 Feb 2010 13:24
Last Modified:13 Mar 2014 12:50
Item ID:12747
Owner Only: item control page

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