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Fabrication of single crystal GaAs(001) barriers for magnetic tunnel junctions

Kreuzer, Stephan and Wegscheider, Werner and Weiss, Dieter (2001) Fabrication of single crystal GaAs(001) barriers for magnetic tunnel junctions. Journal of Applied Physics 89 (11), pp. 6751-6753.

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Abstract

A preparation method for magnetic tunnel junctions with single crystal GaAs(001) barriers is demonstrated. The method is based on an epoxy bond and stop etch technique and does not require epitaxial growth of a semiconductor on top of a metal. Stable GaAs tunnel barriers down to 6 nm in thickness were prepared. The I–V measurements show a pronounced nonlinearity. Their variation with temperature ...

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Item Type:Article
Date:1 June 2001
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1063/1.1359219DOI
Related URLs:
URLURL Type
http://link.aip.org/link/?JAPIAU/89/6751/1Publisher
Classification:
NotationType
81.05.Ea; 75.70.Cn; 85.75.Dd; 81.65.Cf; 68.65.Cd; 81.15.HiPACS
Keywords:III-V semiconductors, gallium arsenide, semiconductor growth, magnetic multilayers, tunnelling, etching, semiconductor superlattices, molecular beam epitaxial growth
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Owner: Martin Kaiser
Deposited On:08 Feb 2010 13:29
Last Modified:13 Mar 2014 12:50
Item ID:12752
Owner Only: item control page

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