Kreuzer, Stephan and Wegscheider, Werner and Weiss, Dieter
Fabrication of single crystal GaAs(001) barriers for magnetic tunnel junctions.
Journal of Applied Physics 89 (11), pp. 6751-6753.
A preparation method for magnetic tunnel junctions with single crystal GaAs(001) barriers is demonstrated. The method is based on an epoxy bond and stop etch technique and does not require epitaxial growth of a semiconductor on top of a metal. Stable GaAs tunnel barriers down to 6 nm in thickness were prepared. The I–V measurements show a pronounced nonlinearity. Their variation with temperature depends strongly on the barrier thickness which is weak for the 6 nm barriers, a clear indication for quantum mechanical tunneling as the dominant transport channel.
|Date:||1 June 2001|
|Institutions:||Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider|
|81.05.Ea; 75.70.Cn; 85.75.Dd; 81.65.Cf; 68.65.Cd; 81.15.Hi||PACS|
|Keywords:||III-V semiconductors, gallium arsenide, semiconductor growth, magnetic multilayers, tunnelling, etching, semiconductor superlattices, molecular beam epitaxial growth|
|Subjects:||500 Science > 530 Physics|
|Created at the University of Regensburg:||Unknown|
|Deposited On:||08 Feb 2010 13:29|
|Last Modified:||13 Mar 2014 12:50|