Schwarz, Ulrich and Sturm, Evi and Wegscheider, Werner and Kümmler, V. and Lell, Alfred and Härle, Volker (2003) Optical gain, carrier-induced phase shift, and linewidth enhancement factor in InGaN quantum well lasers. Applied Physics Letters 83 (20), 4095 .
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Adapting the Hakki Paoli method to group III nitrides, we measure gain, differential gain, carrier-induced change of refractive index, carrier-induced phase shift, and the antiguiding factor. Our measurements also cover the low-carrier-density regime, in which spontaneous and piezoelectric fields and Coulomb interaction are only partially screened. This regime is most interesting as a comparison with existing theoretical simulations, including many-body effects.
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|Date:||17 November 2003|
|Institutions:||Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider|
|Keywords:||refractive index, quantum well lasers, spectral line breadth, indium compounds, gallium compounds, III-V semiconductors, semiconductor quantum wells|
|Dewey Decimal Classification:||500 Science > 530 Physics|
|Created at the University of Regensburg:||Unknown|
|Deposited on:||08 Feb 2010 13:42|
|Last modified:||13 Mar 2014 12:50|