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Optical gain, carrier-induced phase shift, and linewidth enhancement factor in InGaN quantum well lasers

Schwarz, Ulrich and Sturm, Evi and Wegscheider, Werner and Kümmler, V. and Lell, Alfred and Härle, Volker (2003) Optical gain, carrier-induced phase shift, and linewidth enhancement factor in InGaN quantum well lasers. Applied Physics Letters 83 (20), 4095 .

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Abstract

Adapting the Hakki Paoli method to group III nitrides, we measure gain, differential gain, carrier-induced change of refractive index, carrier-induced phase shift, and the antiguiding factor. Our measurements also cover the low-carrier-density regime, in which spontaneous and piezoelectric fields and Coulomb interaction are only partially screened. This regime is most interesting as a comparison ...

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Item Type:Article
Date:17 November 2003
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1063/1.1628825DOI
Related URLs:
URLURL Type
http://link.aip.org/link/?APPLAB/83/4095/1Publisher
Classification:
NotationType
42.55.Px; 78.20.Ci; 85.35.Be; 78.67.DePACS
Keywords:refractive index, quantum well lasers, spectral line breadth, indium compounds, gallium compounds, III-V semiconductors, semiconductor quantum wells
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Owner: Martin Kaiser
Deposited On:08 Feb 2010 13:42
Last Modified:13 Mar 2014 12:50
Item ID:12754
Owner Only: item control page
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