Gareev, Rashid and Petukhov, A. and Schlapps, Markus and Sadowski, Janusz and Wegscheider, Werner (2010) Giant anisotropic magnetoresistance in insulating ultrathin (Ga,Mn)As. Applied Physics Letters 96, 052114.
Full text not available from this repository.
Other URL: http://link.aip.org/link/?APPLAB/96/052114/1
Molecular-beam epitaxy grown, 5 nm thick annealed Ga0.95Mn0.05As films demonstrate transition from metallic to insulating state for sheet resistances near resistance quantum, which we connect with the two-dimensional hole localization. Below the metal-insulator transition we found the giant anisotropic magnetoresistance (GAMR) effect, which depends on the orientation of magnetization to crystallographic axes and demonstrates the twofold symmetry angular dependence. The GAMR manifests itself in positive magnetoresistance near 50% at T=1.7 K for H// crystallographic direction in contrast to smaller negative magnetoresistance for H//[1[overline 1]0] direction. We connect the GAMR with formation of high- and low-resistance states with different localization due to anisotropic spin-orbit interaction.
|Date:||4 February 2010|
|Institutions:|| Physics > Institute of Experimental and Applied Physics > Chair Professor Back > Group Christian Back|
Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss
Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
|Projects:||SFB 689: Spinphänomene in reduzierten Dimensionen|
|Keywords:||crystal orientation, electric resistance, gallium arsenide, giant magnetoresistance, magnetic anisotropy, magnetisation, manganese compounds, metal-insulator transition, molecular beam epitaxial growth, semimagnetic semiconductors, spin-orbit interactions|
|Subjects:||500 Science > 530 Physics|
|Refereed:||Yes, this version has been refereed|
|Created at the University of Regensburg:||Yes|
|Deposited On:||18 Feb 2010 14:19|
|Last Modified:||06 Jul 2010 11:40|