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Giant anisotropic magnetoresistance in insulating ultrathin (Ga,Mn)As

Gareev, Rashid and Petukhov, A. and Schlapps, Markus and Sadowski, Janusz and Wegscheider, Werner (2010) Giant anisotropic magnetoresistance in insulating ultrathin (Ga,Mn)As. Applied Physics Letters 96, 052114.

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Other URL: http://link.aip.org/link/?APPLAB/96/052114/1


Abstract

Molecular-beam epitaxy grown, 5 nm thick annealed Ga0.95Mn0.05As films demonstrate transition from metallic to insulating state for sheet resistances near resistance quantum, which we connect with the two-dimensional hole localization. Below the metal-insulator transition we found the giant anisotropic magnetoresistance (GAMR) effect, which depends on the orientation of magnetization to ...

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Item Type:Article
Date:4 February 2010
Institutions:Physics > Institute of Experimental and Applied Physics > Chair Professor Back > Group Christian Back
Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss
Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Projects:SFB 689: Spinphänomene in reduzierten Dimensionen
Identification Number:
ValueType
10.1063/1.3309683 DOI
Classification:
NotationType
72.20.MyPACS
75.47.DePACS
75.30.GwPACS
75.60.EjPACS
71.30.+hPACS
Keywords: crystal orientation, electric resistance, gallium arsenide, giant magnetoresistance, magnetic anisotropy, magnetisation, manganese compounds, metal-insulator transition, molecular beam epitaxial growth, semimagnetic semiconductors, spin-orbit interactions
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Owner: Webmaster Back
Deposited On:18 Feb 2010 14:19
Last Modified:06 Jul 2010 11:40
Item ID:13022
Owner Only: item control page
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