Wegscheider, Werner and Eberl, Karl and Abstreiter, Gerhard and Cerva, Hans and Oppolzer, Helmut (1990) New relaxation mechanism in short period strained-layer superlattices. In: Sinclair, Robert, (ed.) High resolution electron microscopy of defects in materials: symposium held April 16.-18., 1990, San Francisco, California, USA. Materials Research Society symposium proceedings, 183. Materials Research Society, Pittsburgh, Pennsylvania, USA, p. 155. ISBN 1-558-99072-0.
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High quality Si/Ge strained-layer superlattices composed of a sequence of alternating 3 monolayers pure Si and 9 monolayers pure Ge have been grown by molecular beam epitaxy at 310 0 C on Ge(001) substrates. In order to investigate the transition from coherent to incoherent growth in these tensily strained structures a set of samples with varying number of superlattice periods has been studied by ...
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|Item type:||Book section|
|Institutions:||Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider|
|Dewey Decimal Classification:||500 Science > 530 Physics|
|Created at the University of Regensburg:||Unknown|
|Deposited on:||02 Mar 2010 13:34|
|Last modified:||02 Mar 2010 13:34|