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Electronic properties of AFM-defined semiconductor nanostructures

Lüscher, Silvia and Held, Ryan and Fuhrer, Andreas and Heinzel, Thomas and Ensslin, Klaus and Bichler, Max and Wegscheider, Werner (2001) Electronic properties of AFM-defined semiconductor nanostructures. Materials Science and Engineering C 15 (1-2), pp. 153-157.

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Abstract

The quest for even smaller and better-controlled semiconductor nanostructures calls for improved nanofabrication techniques. We succeeded in patterning metallic and semiconducting nanostructures by using local oxidation-mediated via a voltage between a conducting surface and a close-by tip of an atomic force microscope (AFM). In particular, we were able to control the electronic properties of ...

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Item Type:Article
Date:20 August 2001
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1016/S0928-4931(01)00253-3DOI
Keywords:Semiconductor nanostructures; Nanofabrication
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Owner: Martin Kaiser
Deposited On:02 Mar 2010 13:47
Last Modified:13 Mar 2014 13:01
Item ID:13198
Owner Only: item control page

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