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Comparison of Growth and Strain Relaxation of Si/Ge Superlattices under Compressive and Tensile Strain Field

Wegscheider, Werner and Eberl, Karl and Abstreiter, Gerhard and Cerva, Hans and Oppolzer, Helmut (1991) Comparison of Growth and Strain Relaxation of Si/Ge Superlattices under Compressive and Tensile Strain Field. In: Bean, John Condon, (ed.) Silicon molecular beam epitaxy: symposium held April 29- May 3, 1991, Anaheim, California, USA. Materials Research Society symposium proceedings, 220. Materials Research Society, Pittsburgh, Pennsylvania, USA, p. 135. ISBN 1-558-99114-X.

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Item Type:Book Section
Date:1991
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Owner: Martin Kaiser
Deposited On:02 Mar 2010 13:46
Last Modified:02 Mar 2010 13:46
Item ID:13199
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