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Hochbewegliche zweidimensionale Lochsysteme in GaAs-AlGaAs-Heterostrukturen

URN to cite this document: urn:nbn:de:bvb:355-epub-133822

Gerl, Christian (2010) Hochbewegliche zweidimensionale Lochsysteme in GaAs-AlGaAs-Heterostrukturen. PhD, Universität Regensburg

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Abstract (German)

Diese Arbeit behandelt die Herstellung hochbeweglicher zweidimensionaler Lochsysteme (2DHG) in GaAs/AlGaAs Heterostrukturen mittels Molekularstrahlepitaxie (MBE) und deren Charakterisierung durch Magnetotransportuntersuchungen bei tiefen Temperaturen zwischen 4 K und 30 mK. Im Mittelpunkt liegt hierbei die Optimierung von Ladungsträgerbeweglichkeiten. Dies wird erreicht durch die Einführung einer ...


Translation of the abstract (English)

This thesis outlines the fabrication of high mobility two-dimensional hole-gases (2DHG) in GaAs/AlGaAs heterostructures with molecular beam epitaxy (MBE) and their characterization with magnetotransport measurements at low temperatures between 4 K and 30 mK. Here the optimization of the carrier mobility is focused. This will be achieved by introducing a novel carbon-filament doping source, with ...


Export bibliographical data

Item Type:Thesis of the University of Regensburg (PhD)
Date:18 March 2010
Referee:Prof. Dr. Werner Wegscheider
Date of exam:14 October 2009
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Keywords:Halbleiter, Molekularstrahlepitaxie, molecular beam epitaxy, Galliumarsenid, quantum Hall, Heterostruktur, Kohlenstoff, Carbon, 2DHG
Dewey Decimal Classification:500 Science > 530 Physics
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Deposited On:18 Mar 2010 09:47
Last Modified:13 Mar 2014 13:04
Item ID:13382
Owner Only: item control page


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