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Evidence and evaluation of the Bychkov-Rashba effect in SiGe/Si/SiGe quantum wells

Wilamowski, Zbyslaw and Jantsch, Wolfgang and Malissa, Hans and Rössler, Ulrich (2002) Evidence and evaluation of the Bychkov-Rashba effect in SiGe/Si/SiGe quantum wells. Physical Review B 66 (19), p. 195315.

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Abstract

From spin resonance of two-dimensional (2D) conduction electrons in a modulation doped SiGe/Si/SiGe quantum well structure we find a 2D anisotropy of both the line broadening (dephasing time) and the g factor. Both can be explained consistently employing the Bychkov-Rashba (BR) term H_BR = alpha(k×sigma)·ez, which turns out here to be the dominant coupling between electron orbital motion and ...

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Item Type:Article
Date:November 2002
Institutions:Physics > Institute of Theroretical Physics > Retired Professors > Group Ulrich Rössler
Identification Number:
ValueType
10.1103/PhysRevB.66.195315DOI
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Owner: Redakteur Physik
Deposited On:20 Mar 2007
Last Modified:13 Mar 2014 09:51
Item ID:1347
Owner Only: item control page

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