Wilamowski, Zbyslaw and Jantsch, Wolfgang and Malissa, Hans and Rössler, Ulrich (2002) Evidence and evaluation of the Bychkov-Rashba effect in SiGe/Si/SiGe quantum wells. Physical Review B 66 (19), p. 195315.
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Other URL: http://link.aps.org/abstract/PRB/v66/e195315
From spin resonance of two-dimensional (2D) conduction electrons in a modulation doped SiGe/Si/SiGe quantum well structure we find a 2D anisotropy of both the line broadening (dephasing time) and the g factor. Both can be explained consistently employing the Bychkov-Rashba (BR) term H_BR = alpha(k×sigma)·ez, which turns out here to be the dominant coupling between electron orbital motion and spin. We obtain a BR parameter of alpha= 0.55×10–12 eV cm—three orders of magnitude smaller than in quantum well structures based on III-V semiconductors, consistent with the much smaller spin-orbit coupling in Si.
|Institutions:||Physics > Institute of Theroretical Physics > Retired Professors > Group Ulrich Rössler|
|Subjects:||500 Science > 530 Physics|
|Refereed:||Yes, this version has been refereed|
|Created at the University of Regensburg:||Yes|
|Deposited On:||20 Mar 2007|
|Last Modified:||20 Jul 2011 20:55|