Wurstbauer, Ursula and Knott, S. and Zolotaryov, A. and Schuh, Dieter and Hansen, W. and Wegscheider, Werner (2010) Strong localization effect in magnetic two-dimensional hole systems. Applied Physics Letters 96, p. 22103.
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We report an extensive study of the magnetotransport properties of magnetically doped two-dimensional hole systems. Inverted manganese modulation doped InAs quantum wells with localized manganese ions providing a magnetic moment of S = 5/2 were grown by molecular beam epitaxy. Strong localization effect found in low-field magnetotransport measurements on these structures can either be modified by ...
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|Date:||12 January 2010|
|Institutions:||Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider|
|Projects:||SFB 689: Spinphänomene in reduzierten Dimensionen|
|Keywords:||galvanomagnetic effects, III-V semiconductors, indium compounds, magnetic moments, manganese, molecular beam epitaxial growth, semiconductor doping, semiconductor quantum wells|
|Dewey Decimal Classification:||500 Science > 530 Physics|
|Refereed:||Yes, this version has been refereed|
|Created at the University of Regensburg:||Partially|
|Deposited On:||19 Mar 2010 07:57|
|Last Modified:||19 Mar 2010 07:57|