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Strong localization effect in magnetic two-dimensional hole systems

Wurstbauer, Ursula and Knott, S. and Zolotaryov, A. and Schuh, Dieter and Hansen, W. and Wegscheider, Werner (2010) Strong localization effect in magnetic two-dimensional hole systems. Applied Physics Letters 96, p. 22103.

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Other URL: http://link.aip.org/link/APPLAB/v96/i2/p022103/s1


Abstract

We report an extensive study of the magnetotransport properties of magnetically doped two-dimensional hole systems. Inverted manganese modulation doped InAs quantum wells with localized manganese ions providing a magnetic moment of S = 5/2 were grown by molecular beam epitaxy. Strong localization effect found in low-field magnetotransport measurements on these structures can either be modified by ...

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Item Type:Article
Date:12 January 2010
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Projects:SFB 689: Spinphänomene in reduzierten Dimensionen
Identification Number:
ValueType
10.1063/1.3291673DOI
Classification:
NotationType
72.20.MyPACS
75.30.CrPACS
61.72.U-PACS
81.07.StPACS
81.15.HiPACS
Keywords:galvanomagnetic effects, III-V semiconductors, indium compounds, magnetic moments, manganese, molecular beam epitaxial growth, semiconductor doping, semiconductor quantum wells
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Partially
Owner: Claudia Rahm
Deposited On:19 Mar 2010 07:57
Last Modified:19 Mar 2010 07:57
Item ID:13619
Owner Only: item control page
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