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Electron g factor in one- and zero-dimensional semiconductor nanostructures

Kieselev, A. and Ivchenko, E. and Rössler, Ulrich (1998) Electron g factor in one- and zero-dimensional semiconductor nanostructures. Physical Review B 58 (24), pp. 16353-16359.

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Other URL: http://link.aps.org/abstract/PRB/v58/p16353

Abstract

We investigate theoretically the Zeeman effect on the lowest confined electron in quantum wires and quantum dots. A general relation is established between the symmetry of a low-dimensional system and properties of the electron g factor tensor, g $_{$\alpha$ $\beta$}$ . The powerful method used earlier to calculate the transverse g factor in quantum wells is extended to one-dimensional (1D) and 0D zinc-blende-based nanostructures and analytical expressions are derived in the frame of Kane's model for the g factors in quantum wells, cylindrical wires, and spherical dots. The role of dimensionality is illustrated on two particular heteropairs, GaAs/Al $_{x}$ Ga $_{1-x}$ As and Ga $_{1-x}$ In $_{x}$ As/InP. The efficiency of the developed theoretical concept is demonstrated by calculating the three principal values of the g factor tensor in rectangular quantum wires in dependence on the wire width to establish also the connection with the 2D case.