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Crossing of Landau levels of conduction and valence subbands in an inverted HgTe/CdTe quantum well

Schultz, M. and Merkt, U. and Sonntag, A. and Rössler, Ulrich and Colin, T. and Helgesen, P. and Skauli, T. and Lovold, S. (1998) Crossing of Landau levels of conduction and valence subbands in an inverted HgTe/CdTe quantum well. Physical Review B 57 (23), pp. 14772-14775.

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Other URL: http://link.aps.org/abstract/PRB/v57/p14772

Abstract

In the inverted-band regime of HgTe/CdTe quantum wells, the lowest Landau level of the lowest conduction subband and the highest Landau level of the topmost valence subband are predicted to cross at a critical magnetic field B $_{c}$ . We study this crossing experimentally with far-infrared Fourier-transform spectroscopy in a gated HgTe/CdTe quantum well with tunable electron density. The crossing point is identified by a characteristic exchange of oscillator strength between the two transitions involved, one being a cyclotron resonance, the other an intersubband resonance. The experimental resonance positions, the oscillator strengths as well as the value of B $_{c}$ , are in good agreement with theoretical results of a 6 x 6 ${\bf k·p}$ model evaluated for the [211] growth direction.