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Global band structure and near-band edge states

Wellenhofer, G. and Rössler, Ulrich (1997) Global band structure and near-band edge states. Physica Status Solidi (B) 202 (1), pp. 107-123.

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Abstract

The global band structure from ab-initio calculations using DFT-LDA concepts is presented and discussed for 2H, 3C, 4H, 6H, and 15R SiC in view of the different stacking sequences and point lattices of these polytypes. Details of the conduction and valence band structure close to the band edges are described by using {\bf k·p} models and thermal density-of-states effective masses are ...

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Item Type:Article
Date:1997
Institutions:Physics > Institute of Theroretical Physics > Retired Professors > Group Ulrich Rössler
Identification Number:
ValueType
10.1002/1521-3951(199707)202:1<107::AID-PSSB107>3.0.CO;2-9DOI
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Owner: Redakteur Physik
Deposited On:20 Mar 2007
Last Modified:13 Mar 2014 09:53
Item ID:1393
Owner Only: item control page
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