Wellenhofer, G. and Rössler, Ulrich (1997) Global band structure and near-band edge states. Physica Status Solidi (B) 202 (1), pp. 107-123.
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The global band structure from ab-initio calculations using DFT-LDA concepts is presented and discussed for 2H, 3C, 4H, 6H, and 15R SiC in view of the different stacking sequences and point lattices of these polytypes. Details of the conduction and valence band structure close to the band edges are described by using models and thermal density-of-states effective masses are calculated.
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|Institutions:||Physics > Institute of Theroretical Physics > Alumni or Retired Professors > Group Ulrich Rössler|
|Dewey Decimal Classification:||500 Science > 530 Physics|
|Refereed:||Yes, this version has been refereed|
|Created at the University of Regensburg:||Yes|
|Deposited On:||20 Mar 2007|
|Last Modified:||13 Mar 2014 09:53|