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Pressure dependence of the electronic band gap in 6H-SiC

Engelbrecht, F. and Zeman, J. and Wellenhofer, G. and Peppermüller, C. and Helbig, R. and Martinez, G. and Rössler, Ulrich (1996) Pressure dependence of the electronic band gap in 6H-SiC. Physica Status Solidi (B) 198 (1), pp. 81-86.

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Other URL: http://www3.interscience.wiley.com/cgi-bin/abstract/112427495/ABSTRACT


Abstract

Photoluminescence experiments on 6H-SiC doped with nitrogen have been performed at low temperature (T = (29 ± 2) K) under hydrostatic pressure up to 5 GPa. The pressure coefficients of the S0, R0, P0, S02, and R02 emission lines related to the neutral nitrogen donor bound excitons were determined. The pressure coefficient of the indirect gap of 6H-Sic deduced from the P0 line turns out to be +2.0 ...

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Item Type:Article
Date:1996
Institutions:Physics > Institute of Theroretical Physics > Retired Professors > Group Ulrich Rössler
Identification Number:
ValueType
10.1002/pssb.2221980111DOI
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Owner: Redakteur Physik
Deposited On:20 Mar 2007
Last Modified:05 Aug 2009 13:28
Item ID:1396
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