Engelbrecht, F. and Zeman, J. and Wellenhofer, G. and Peppermüller, C. and Helbig, R. and Martinez, G. and Rössler, Ulrich (1996) Pressure dependence of the electronic band gap in 6H-SiC. Physica Status Solidi (B) 198 (1), pp. 81-86.
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Photoluminescence experiments on 6H-SiC doped with nitrogen have been performed at low temperature (T = (29 ± 2) K) under hydrostatic pressure up to 5 GPa. The pressure coefficients of the S0, R0, P0, S02, and R02 emission lines related to the neutral nitrogen donor bound excitons were determined. The pressure coefficient of the indirect gap of 6H-Sic deduced from the P0 line turns out to be +2.0 meV/GPa. Nonrelativistic band structure calculations within the density-functional theory based on the local density approximation are used to calculate the pressure coefficients of the indirect band gaps of the 6H, 4H, and 3C SiC polytypes. The comparison with available experimental data shows good agreement with the theoretical results.
|Institutions:||Physics > Institute of Theroretical Physics > Retired Professors > Group Ulrich Rössler|
|Subjects:||500 Science > 530 Physics|
|Refereed:||Yes, this version has been refereed|
|Created at the University of Regensburg:||Yes|
|Deposited On:||20 Mar 2007|
|Last Modified:||05 Aug 2009 15:28|
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