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Strain splitting of nitrogen acceptor levels in ZnSe

Mayer, H. and Rössler, Ulrich and Wolf, K. and Elstner, A. and Stanzl, H. and Reisinger, T. and Gebhardt, Wolfgang (1995) Strain splitting of nitrogen acceptor levels in ZnSe. Physical Review B 52 (7), pp. 4956-4964.

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Other URL: http://link.aps.org/abstract/PRB/v52/p4956


We report on the experimental and theoretical study of the strain splitting of nitrogen acceptor levels in epitaxially grown ZnSe on GaAs substrate. The crystal strain is due to the different lattice constants and thermal expansion coefficients and is determined by x-ray diffractometry. The binding energies of the acceptor ground and excited states have been determined by temperature-dependent ...


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Item Type:Article
Date:August 1995
Institutions:Physics > Institute of Theroretical Physics > Alumni or Retired Professors > Group Ulrich Rössler
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Dewey Decimal Classification:500 Science > 530 Physics
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Deposited On:20 Mar 2007
Last Modified:13 Mar 2014 09:54
Item ID:1408
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