Strain splitting of nitrogen acceptor levels in ZnSe

DOI zum Zitieren dieses Dokuments:: 10.5283/epub.1408

Mayer, H. ; Rössler, Ulrich ; Wolf, K. ; Elstner, A. ; Stanzl, H. ; Reisinger, T. ; Gebhardt, Wolfgang

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Veröffentlichungsdatum dieses Volltextes: 05 Aug 2009 13:28

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We report on the experimental and theoretical study of the strain splitting of nitrogen acceptor levels in epitaxially grown ZnSe on GaAs substrate. The crystal strain is due to the different lattice constants and thermal expansion coefficients and is determined by x-ray diffractometry. The binding energies of the acceptor ground and excited states have been determined by temperature-dependent ...