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Molecular-beam epitaxy of the half-Heusler alloy NiMnSb on (In,Ga)As/InP (001)

Bach, P. and Bader, A.S. and Ruster, C. and Gould, C. and Becker, C.R. and Schmidt, G. and Molenkamp, L.W. and Weigand, W. and Kumpf, C. and Umbach, E. and Urban, R. and Woltersdorf, Georg and Heinrich, B. (2003) Molecular-beam epitaxy of the half-Heusler alloy NiMnSb on (In,Ga)As/InP (001). Applied Physics Letters 83 (3), pp. 521-523.

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We report the growth of the half-Heusler alloy NiMnSb on InP (001) by molecular-beam epitaxy using a lattice-matched (In,Ga)As buffer. High-resolution x-ray diffraction confirms a high crystalline quality. Spot-profile analysis low-energy electron diffraction measurements show well-defined surface reconstructions. The samples show the expected high Curie temperature and an uniaxial anisotropy.

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Item Type:Article
Date:July 2003
Institutions:Physics > Institute of Experimental and Applied Physics > Chair Professor Back > Group Christian Back
Interdisciplinary Subject Network:Not selected
Identification Number:
Dewey Decimal Classification:500 Science > 530 Physics
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Unknown
Deposited On:19 Jul 2010 13:05
Last Modified:13 Mar 2014 13:26
Item ID:14945
Owner Only: item control page


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