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Molecular-beam epitaxy of the half-Heusler alloy NiMnSb on (In,Ga)As/InP (001)

Bach, P. and Bader, A.S. and Ruster, C. and Gould, C. and Becker, C.R. and Schmidt, G. and Molenkamp, L.W. and Weigand, W. and Kumpf, C. and Umbach, E. and Urban, R. and Woltersdorf, Georg and Heinrich, B. (2003) Molecular-beam epitaxy of the half-Heusler alloy NiMnSb on (In,Ga)As/InP (001). Applied Physics Letters 83 (3), pp. 521-523.

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Abstract

We report the growth of the half-Heusler alloy NiMnSb on InP (001) by molecular-beam epitaxy using a lattice-matched (In,Ga)As buffer. High-resolution x-ray diffraction confirms a high crystalline quality. Spot-profile analysis low-energy electron diffraction measurements show well-defined surface reconstructions. The samples show the expected high Curie temperature and an uniaxial anisotropy.

Item Type:Article
Institutions: Physics > Institute of Experimental and Applied Physics > Chair Professor Back > Group Christian Back
Interdisciplinary subject network:Not selected
Identification Number:
ValueType
10.1063/1.1594286DOI
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Unknown
Owner:Georg Woltersdorf
Deposited On:19 Jul 2010 15:05
Last Modified:21 Jul 2011 00:28
Item ID:14945
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