Bach, P. and Bader, A.S. and Ruster, C. and Gould, C. and Becker, C.R. and Schmidt, G. and Molenkamp, L.W. and Weigand, W. and Kumpf, C. and Umbach, E. and Urban, R. and Woltersdorf, Georg and Heinrich, B.
Molecular-beam epitaxy of the half-Heusler alloy NiMnSb on (In,Ga)As/InP (001).
Applied Physics Letters 83 (3), pp. 521-523.
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We report the growth of the half-Heusler alloy NiMnSb on InP (001) by molecular-beam epitaxy using a lattice-matched (In,Ga)As buffer. High-resolution x-ray diffraction confirms a high crystalline quality. Spot-profile analysis low-energy electron diffraction measurements show well-defined surface reconstructions. The samples show the expected high Curie temperature and an uniaxial anisotropy.
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