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Tunneling magnetoresistance: The relevance of disorder at the interface

Wimmer, Michael and Richter, Klaus (2005) Tunneling magnetoresistance: The relevance of disorder at the interface. In: Menéndez, José, (ed.) Physics of semiconductors Semiconductors: 27th International Conference on the Physics of Semiconductors; ICPS-27; Flagstaff, Arizona, 26 - 30 July 2004. AIP conference proceedings, 772. American Institute of Physics, Melville, NY, p. 1375. ISBN 0-7354-0257-4.

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The effect of disorder on the tunneling magnetoresistance (TMR) of a semiconductor tunnel barrier is investigated using a single-band model including elastic scattering. We find that disorder can decrease the TMR ratio significantly. Furthermore, we show that impurities close to the barrier interface are most effective in reducing the TMR ratio.

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Item type:Book section
Institutions:Physics > Institute of Theroretical Physics > Chair Professor Richter > Group Klaus Richter
Projects:Graduiertenkolleg Nichtlinearität und Nichtgleichgewicht
Dewey Decimal Classification:500 Science > 530 Physics
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Deposited on:20 Mar 2007
Last modified:28 Apr 2016 13:27
Item ID:1547
Owner only: item control page
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