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Spin-dependent tunneling through a symmetric semiconductor barrier

Perel', V. and Tarasenko, S. and Yassievich, I. and Ganichev, Sergey and Belkov, Vassilij and Prettl, Wilhelm (2003) Spin-dependent tunneling through a symmetric semiconductor barrier. Physical Review B 67 (20), p. 201304.

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Other URL: http://prola.aps.org/abstract/PRB/v67/i20/e201304


Abstract

The problem of electron tunneling through a symmetric semiconductor barrier based on zinc-blende-structure material is studied. The k3 Dresselhaus terms in the effective Hamiltonian of bulk semiconductor of the barrier are shown to result in a dependence of the tunneling transmission on the spin orientation. The difference of the transmission probabilities for opposite spin orientations can achieve several percents for the reasonable width of the barriers.


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Item Type:Article
Date:May 2003
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Wilhelm Prettl
Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
Projects:Graduiertenkolleg Nichtlinearität und Nichtgleichgewicht
Identification Number:
ValueType
10.1103/PhysRevB.67.201304DOI
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Deposited On:20 Mar 2007
Last Modified:13 Mar 2014 09:59
Item ID:1624
Owner Only: item control page

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