Schmult, Stefan and Gerl, Christian and Wurstbauer, Ursula and Mitzkus, C. and Wegscheider, Werner
Carbon-doped high mobility two-dimensional hole gases on (110) faced GaAs.
Applied Physics Letters 86, p. 202105.
Other URL: http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=APPLAB000086000020202105000001&idtype=cvips&gifs=yes
Carbon-doped high mobility two-dimensional hole gases grown on (110) oriented GaAs substrates have been grown with hole mobilities exceeding 10^6 cm^2/Vs in single heterojunction GaAs/AlGaAs structures. At these high mobilities, a pronounced mobility anisotropy has been observed. Rashba induced spin-splitting in these asymmetric structures has been found to be independent on the transport direction.