Go to content
UR Home

Carbon-doped high mobility two-dimensional hole gases on (110) faced GaAs

Schmult, Stefan and Gerl, Christian and Wurstbauer, Ursula and Mitzkus, C. and Wegscheider, Werner (2005) Carbon-doped high mobility two-dimensional hole gases on (110) faced GaAs. Applied Physics Letters 86, p. 202105.

[img]
Preview
PDF
Download (189kB)

at publisher (via DOI)

at arXiv

Other URL: http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=APPLAB000086000020202105000001&idtype=cvips&gifs=yes


Abstract

Carbon-doped high mobility two-dimensional hole gases grown on (110) oriented GaAs substrates have been grown with hole mobilities exceeding 10^6 cm^2/Vs in single heterojunction GaAs/AlGaAs structures. At these high mobilities, a pronounced mobility anisotropy has been observed. Rashba induced spin-splitting in these asymmetric structures has been found to be independent on the transport direction.


Export bibliographical data



Item Type:Article
Date:May 2005
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Projects:Graduiertenkolleg Nichtlinearität und Nichtgleichgewicht
Identification Number:
ValueType
10.1063/1.1926409DOI
cond-mat/0503323arXiv ID
Related URLs:
URLURL Type
http://arxiv.org/abs/cond-mat/0503323Preprint
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Deposited On:20 Mar 2007
Last Modified:13 Mar 2014 09:59
Item ID:1626
Owner Only: item control page

Downloads

Downloads per month over past year

  1. Homepage UR

University Library

Publication Server

Contact person
Gernot Deinzer

Phone +49 941 943-2759
Contact