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Carbon-doped high mobility two-dimensional hole gases on (110) faced GaAs

Schmult, Stefan and Gerl, Christian and Wurstbauer, Ursula and Mitzkus, C. and Wegscheider, Werner (2005) Carbon-doped high mobility two-dimensional hole gases on (110) faced GaAs. Applied Physics Letters 86, p. 202105.

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Abstract

Carbon-doped high mobility two-dimensional hole gases grown on (110) oriented GaAs substrates have been grown with hole mobilities exceeding 10^6 cm^2/Vs in single heterojunction GaAs/AlGaAs structures. At these high mobilities, a pronounced mobility anisotropy has been observed. Rashba induced spin-splitting in these asymmetric structures has been found to be independent on the transport direction.

Item Type:Article
Institutions: Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Projects:Graduiertenkolleg Nichtlinearität und Nichtgleichgewicht
Identification Number:
ValueType
10.1063/1.1926409DOI
cond-mat/0503323arXiv ID
Related URLs:
URLURL Type
http://arxiv.org/abs/cond-mat/0503323Preprint
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Owner:Redakteur Physik
Deposited On:20 Mar 2007
Last Modified:20 Jul 2011 22:59
Item ID:1626
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