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Carbon doped symmetric GaAs/AlGaAs quantum wells with hole mobilities beyond 10^6 cm^2/Vs

Gerl, Christian and Schmult, S. and Tranitz, H. and Mitzkus, C. and Wegscheider, Werner (2005) Carbon doped symmetric GaAs/AlGaAs quantum wells with hole mobilities beyond 10^6 cm^2/Vs. Applied Physics Letters 86, p. 252105.

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Abstract

Utilizing a carbon filament doping source, we prepared two-dimensional hole gases in a symmetric quantum well structure in the GaAs/AlGaAs heterosystem. Low temperature hole mobilities up to 1.2 x 10^6 cm^2/Vs at a density of 2.3 x 10^11 cm^-2 were achieved on GaAs (001) substrates. In contrast to electron systems, the hole mobility sensitively depends on variations of the quantum well width and ...

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Item Type:Article
Date:2005
Institutions:UNSPECIFIED
Projects:Graduiertenkolleg Nichtlinearität und Nichtgleichgewicht
Identification Number:
ValueType
cond-mat/0501492arXiv ID
Related URLs:
URLURL Type
http://arxiv.org/abs/cond-mat/0501492Preprint
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Owner: Redakteur Physik
Deposited On:20 Mar 2007
Last Modified:05 Aug 2009 13:30
Item ID:1627
Owner Only: item control page
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