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Fractional quantum Hall effect in CdTe

Piot, B.A. and Kunc, J. and Potemski, M. and Maude, D.K. and Betthausen, Christian and Vogl, Anton and Weiss, Dieter and Karczewski, G. and Wojtowicz, T. (2010) Fractional quantum Hall effect in CdTe. Physical Review B (PRB) 82 (8), 081307-1.

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Other URL: http://link.aps.org/doi/10.1103/PhysRevB.82.081307


Abstract

The fractional quantum Hall (FQH) effect is reported in a high mobility CdTe quantum well at millikelvin temperatures. Fully developed FQH states are observed at filling factor 4/3 and 5/3 and are found to be both spin-polarized ground state for which the lowest energy excitation is not a spin flip. This can be accounted for by the relatively high intrinsic Zeeman energy in this single valley ...

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Item Type:Article
Date:12 August 2010
Institutions:Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss
Identification Number:
ValueType
10.1103/PhysRevB.82.081307DOI
Classification:
NotationType
73.43.Qt, 73.40.Lq, 73.43.Lp PACS
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Owner: Claudia Rahm
Deposited On:08 Sep 2010 08:16
Last Modified:13 Mar 2014 14:01
Item ID:16520
Owner Only: item control page

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