Piot, B.A. and Kunc, J. and Potemski, M. and Maude, D.K. and Betthausen, Christian and Vogl, Anton and Weiss, Dieter and Karczewski, G. and Wojtowicz, T.
Fractional quantum Hall effect in CdTe.
Physical Review B (PRB) 82 (8), 081307-1.
Other URL: http://link.aps.org/doi/10.1103/PhysRevB.82.081307
The fractional quantum Hall (FQH) effect is reported in a high mobility CdTe quantum well at millikelvin temperatures. Fully developed FQH states are observed at filling factor 4/3 and 5/3 and are found to be both spin-polarized ground state for which the lowest energy excitation is not a spin flip. This can be accounted for by the relatively high intrinsic Zeeman energy in this single valley two-dimensional electron gas. FQH minima are also observed in the first excited (N=1) Landau level at filling factor 7/3 and 8/3 for intermediate temperatures. In contrast, the 5/2 FQH state remains absent down to T∼10 mK.