Klappenberger, Florian and Renk, Karl Friedrich and Summer, R. and Keldysh, Leonid and Rieder, Bernhard and Wegscheider, Werner (2003) Electric-field-induced reversible avalanche breakdown in a GaAs microcrystal due to cross band gap impact ionization. Applied Physics Letters 83 (4), pp. 704-706.
Download (151kB) - Repository staff only
We report on a reversible avalanche breakdown due to free-carrier multiplication caused by cross band gap impact ionization in a GaAs microcrystal. The n GaAs microcrystal (length 1 µm, diameter 1 µm) was embedded between n+ GaAs layers serving as electric contacts. We guided an electric pulse to the sample and determined, from the reflected and transmitted pulse, the I(V) characteristic. The breakdown was indicated by a sudden current rise and voltage drop and a hysteresis effect and, furthermore, by electron-hole recombination radiation. We reached the threshold field for ionization by making use of a high-field domain whose formation was based on the Gunn effect. The microcrystal could reproducibly be switched into the nonequilibrium avalanche state. Our analysis indicates that the effect provides a basis for the development of an ultrafast electric switch.
|Institutions:||Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Karl F. Renk|
|Projects:||Graduiertenkolleg Nichtlinearität und Nichtgleichgewicht|
|Subjects:||500 Science > 530 Physics|
|Refereed:||Yes, this version has been refereed|
|Created at the University of Regensburg:||Yes|
|Deposited On:||20 Mar 2007|
|Last Modified:||20 Jul 2011 20:59|