Startseite UB

Electric-field-induced reversible avalanche breakdown in a GaAs microcrystal due to cross band gap impact ionization

Klappenberger, Florian and Renk, Karl Friedrich and Summer, R. and Keldysh, Leonid and Rieder, Bernhard and Wegscheider, Werner (2003) Electric-field-induced reversible avalanche breakdown in a GaAs microcrystal due to cross band gap impact ionization. Applied Physics Letters 83 (4), pp. 704-706.

[img]PDF
Download (151kB) - Repository staff only

at publisher (via DOI)

Other URL: http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=APPLAB000083000004000704000001&idtype=cvips&gifs=yes


Abstract

We report on a reversible avalanche breakdown due to free-carrier multiplication caused by cross band gap impact ionization in a GaAs microcrystal. The n GaAs microcrystal (length 1 µm, diameter 1 µm) was embedded between n+ GaAs layers serving as electric contacts. We guided an electric pulse to the sample and determined, from the reflected and transmitted pulse, the I(V) characteristic. The ...

plus


Export bibliographical data

Item Type:Article
Date:July 2003
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Karl F. Renk
Projects:Graduiertenkolleg Nichtlinearität und Nichtgleichgewicht
Identification Number:
ValueType
10.1063/1.1595712DOI
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Owner: Redakteur Physik
Deposited On:20 Mar 2007
Last Modified:13 Mar 2014 10:00
Item ID:1674
Owner Only: item control page
  1. University

University Library

Publication Server

Contact person
Gernot Deinzer

Telefon 0941 943-2759
Contact