Frequency multiplication using induced dipole domains in a semiconductor superlattice

Abstract

We theoretically studied the possibility of frequency multiplication using propagating dipole domains which are induced in a semiconductor superlattice by microwave radiation. We have investigated the dynamics of electrons in a superlattice submitted to both a static voltage and a microwave field by performing a simulation based on a drift-diffusion model and incorporating current-limiting boundary conditions. The motion of electrons in the superlattice was governed by an Esaki–Tsu drift velocity field characteristic with a negative differential mobility above a critical electrical field. The simulation delivered, for a static voltage larger than a critical voltage, the periodic formation and annihilation of propagating dipole domains and, as a consequence, a reduction of the direct current through the superlattice. Our simulation showed that an additional microwave field can periodically induce and subsequently quench domains giving rise to a strongly anharmonic current. The anharmonicity of the current is the origin for the generation of higher harmonics of the microwave field. Both the formation and annihilation of a domain can take place within a time of about 1 ps suggesting that the mechanism of domain induction and quenching can be used for generation of radiation up to almost 1 THz.