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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-169678
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.16967
Alternative Links zum Volltext:DOI
Zusammenfassung
GaAs/GaMnAs core−shell nanowires were grown by molecular beam epitaxy. The core GaAs nanowires were synthesized under typical nanowire growth conditions using gold as catalyst. For the GaMnAs shell the temperature was drastically reduced to achieve low-temperature growth conditions known to be crucial for high-quality GaMnAs. The GaMnAs shell grows epitaxially on the side facets of the core GaAs ...
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