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Position controlled self-catalyzed growth of GaAs nanowires by molecular beam epitaxy

Bauer, Benedikt and Rudolph, Andreas and Soda, Marcello and Fontcuberta i Morral, Anna and Zweck, Josef and Schuh, Dieter and Reiger, Elisabeth (2010) Position controlled self-catalyzed growth of GaAs nanowires by molecular beam epitaxy. Nanotechnology 21 (43), p. 435601.

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Other URL: http://stacks.iop.org/0957-4484/21/435601


Abstract

GaAs nanowires are grown by molecular beam epitaxy using a self-catalyzed, Ga-assisted growth technique. Position control is achieved by nano-patterning a SiO2 layer with arrays of holes with a hole diameter of 85 nm and a hole pitch varying between 200 nm and 2 µm. Gallium droplets form preferentially at the etched holes acting as catalyst for the nanowire growth. The nanowires have hexagonal ...

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Item Type:Article
Date:2010
Institutions:Physics > Institute of Experimental and Applied Physics > Chair Professor Back > Group Josef Zweck
Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Projects:SFB 689: Spinphänomene in reduzierten Dimensionen, ERA Nanoscience Project QOptInt
Research groups and research centres:Not selected
Identification Number:
ValueType
10.1088/0957-4484/21/43/435601DOI
1006.4060arXiv ID
Related URLs:
URLURL Type
http://arxiv.org/abs/1006.4060v2Preprint
Classification:
NotationType
81.16.HcPACS
81.15.HiPACS
68.65.LaPACS
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Owner: Elisabeth Reiger
Deposited On:06 Oct 2010 11:13
Last Modified:13 Mar 2014 18:44
Item ID:16968
Owner Only: item control page

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