Bauer, Benedikt and Rudolph, Andreas and Soda, Marcello and Fontcuberta i Morral, Anna and Zweck, Josef and Schuh, Dieter and Reiger, Elisabeth
Position controlled self-catalyzed growth of GaAs nanowires by molecular beam epitaxy.
Nanotechnology 21 (43), p. 435601.
at publisher (via DOI)
Other URL: http://stacks.iop.org/0957-4484/21/435601
GaAs nanowires are grown by molecular beam epitaxy using a self-catalyzed, Ga-assisted growth technique. Position control is achieved by nano-patterning a SiO2 layer with arrays of holes with a hole diameter of 85 nm and a hole pitch varying between 200 nm and 2 µm. Gallium droplets form preferentially at the etched holes acting as catalyst for the nanowire growth. The nanowires have hexagonal ...
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