Bauer, Benedikt and Rudolph, Andreas and Soda, Marcello and Fontcuberta i Morral, Anna and Zweck, Josef and Schuh, Dieter and Reiger, Elisabeth (2010) Position controlled self-catalyzed growth of GaAs nanowires by molecular beam epitaxy. Nanotechnology 21 (43), p. 435601.
Other URL: http://stacks.iop.org/0957-4484/21/435601
GaAs nanowires are grown by molecular beam epitaxy using a self-catalyzed, Ga-assisted growth technique. Position control is achieved by nano-patterning a SiO2 layer with arrays of holes with a hole diameter of 85 nm and a hole pitch varying between 200 nm and 2 µm. Gallium droplets form preferentially at the etched holes acting as catalyst for the nanowire growth. The nanowires have hexagonal ...
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|Institutions:||Physics > Institute of Experimental and Applied Physics > Chair Professor Back > Group Josef Zweck|
Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
|Projects:||SFB 689: Spinphänomene in reduzierten Dimensionen, ERA Nanoscience Project QOptInt|
|Interdisciplinary Subject Network:||Not selected|
|Dewey Decimal Classification:||500 Science > 530 Physics|
|Refereed:||Yes, this version has been refereed|
|Created at the University of Regensburg:||Yes|
|Deposited on:||06 Oct 2010 11:13|
|Last modified:||13 Mar 2014 18:44|