Wurstbauer, Ursula and Sliwa, Cezary and Weiss, Dieter and Dietl, Tomasz and Wegscheider, Werner (2010) Hysteretic magnetoresistance and thermal bistability in a magnetic two-dimensional hole system. Nature Physics 6, pp. 955-959.
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Colossal negative magnetoresistance and the associated field-inducedinsulator-to-metal transition—the most characteristic features of magnetic semiconductors—are observed in n-type rare-earth oxides1 and chalcogenides2, p-type manganites3 and n-type4, 5 and p-type diluted magnetic semiconductors4, 6, as well as in quantum wells of n-type diluted magnetic semiconductors7, 8, 9. Here, we report on magnetotransport studies of Mn-modulation-doped InAs quantum wells, which reveal an insulator-to-metal transition that is driven by a magnetic field and dependent on bias voltage, with abrupt and hysteretic changes of resistance over several orders of magnitude. These phenomena coexist with the quantized Hall effect in high magnetic fields. We show that the exchange coupling between a hole and the parent Mn acceptor produces a magnetic anisotropy barrier that shifts the spin relaxation time of the bound hole to a 100 s range in compressively strained quantum wells. This bistability of the individual Mn acceptors explains the hysteretic behaviour while opening prospects for information storing and processing. At high bias voltage another bistability, caused by the overheating of electrons10, gives rise to abrupt resistance jumps
|Date:||3 October 2010|
|Institutions:|| Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss|
Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
|Projects:||SFB 689: Spinphänomene in reduzierten Dimensionen|
|Research groups and research centres:||Not selected|
|Subjects:||500 Science > 530 Physics|
|Refereed:||Yes, this version has been refereed|
|Created at the University of Regensburg:||Yes|
|Deposited On:||07 Oct 2010 13:45|
|Last Modified:||22 May 2012 12:58|