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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-173381
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.17338
Zusammenfassung
Experimental investigations of the Hall effect at the occurrence of autonomous current fluctuations in high-purity n-GaAs epitaxial layers at low temperatures show that the transition to chaos is accompanied by intermittent collapses in the Hall voltage. This may represent the significant third mechanism for a transition into chaos according to the Ruelle-Takens-Newhouse scenario. Basically, ...
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