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Effect of impact ionization on the saturation of 1s→2p+ shallow donor transition in n-GaAs

Weispfenning, M. and Zach, F. and Prettl, Wilhelm (1989) Effect of impact ionization on the saturation of 1s→2p+ shallow donor transition in n-GaAs. International Journal of Infrared and Millimeter Waves 9 (12), pp. 1153-1171.

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Abstract

The magneto-photoconductivity due to 1s-2p+ optical transitions of shallow donors in n-GaAs has been investigated as a function of intensity for several bias voltages at low temperatures between 2K and 4.2 K. At low intensities a superlinear increase of the photoconductive signal with rising intensity has been observed which gets more pronounced at higher bias voltages and lower temperatures. The ...

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Item Type:Article
Date:1989
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Wilhelm Prettl
Identification Number:
ValueType
10.1007/BF01009307DOI
Keywords:shallow donors - nonlinear magneto-photoconductivity - saturation - impact ionization
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Unknown
Owner: Universitätsbibliothek Regensburg
Deposited On:18 Oct 2010 11:58
Last Modified:13 Mar 2014 14:08
Item ID:17349
Owner Only: item control page
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