Bock, W. and Treitinger, L. and Prettl, Wilhelm (1988) High-speed optical detection up to 2.5 Gbit/s with a double polysilicon self-aligned silicon bipolar transistor. Journal de Physique Colloques 49 (C4), pp. 89-92.
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The photo response of a standard high-speed self-aligned silicon bipolar transistor has been investigated. The photosignal of the base-collector diode is found to consist of at least two current components. Optical detection capabilities are demonstrated by excitation with modulated laser light at 830 nm wavelength up to data rates of 2.5Gbit/s.
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|Institutions:||Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Wilhelm Prettl|
|Subjects:||500 Science > 530 Physics|
|Created at the University of Regensburg:||Unknown|
|Deposited On:||18 Oct 2010 12:04|
|Last Modified:||26 Nov 2012 12:47|