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High-speed optical detection up to 2.5 Gbit/s with a double polysilicon self-aligned silicon bipolar transistor

Bock, W. and Treitinger, L. and Prettl, Wilhelm (1988) High-speed optical detection up to 2.5 Gbit/s with a double polysilicon self-aligned silicon bipolar transistor. Journal de Physique Colloques 49 (C4), pp. 89-92.

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Abstract

The photo response of a standard high-speed self-aligned silicon bipolar transistor has been investigated. The photosignal of the base-collector diode is found to consist of at least two current components. Optical detection capabilities are demonstrated by excitation with modulated laser light at 830 nm wavelength up to data rates of ...

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Item Type:Article
Date:1988
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Wilhelm Prettl
Identification Number:
ValueType
10.1051/jphyscol:1988418DOI
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Owner: Martin Kaiser
Deposited On:18 Oct 2010 12:04
Last Modified:26 Nov 2012 12:47
Item ID:17355
Owner Only: item control page
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