Deutsch
Bock, W. and Treitinger, L. and Prettl, Wilhelm (1988) High-speed optical detection up to 2.5 Gbit/s with a double polysilicon self-aligned silicon bipolar transistor. Journal de Physique Colloques 49 (C4), pp. 89-92.
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Abstract
The photo response of a standard high-speed self-aligned silicon bipolar transistor has been investigated. The photosignal of the base-collector diode is found to consist of at least two current components. Optical detection capabilities are demonstrated by excitation with modulated laser light at 830 nm wavelength up to data rates of 2.5Gbit/s.
| Item Type: | Article | ||||
|---|---|---|---|---|---|
| Institutions: | Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Wilhelm Prettl | ||||
| Identification Number: |
| ||||
| Subjects: | 500 Science > 530 Physics | ||||
| Status: | Published | ||||
| Refereed: | Unknown | ||||
| Created at the University of Regensburg: | Unknown | ||||
| Owner: | Martin Kaiser | ||||
| Deposited On: | 18 Oct 2010 14:04 | ||||
| Last Modified: | 26 Nov 2012 13:47 | ||||
| Item ID: | 17355 |
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