Prettl, Wilhelm and Vass, A. and Allan, G. R. and Pidgeon, C. (1983) Power broadening and nonlinear FIR magneto-photoconductivity in n-GaAs. International Journal of Infrared and Millimeter Waves 4 (4), pp. 561-574.
The saturation of the photoconductivity due to 1s-2p+ shallow donor transitions in n-GaAs has been investigated using a high power cw-FIR-laser. Magnetic field strengths were chosen in such a way that 2p+ energy levels were either below or above the N=0 conduction band Landau level. In the former case 1s-p+ transitions are found to be inhomogeneously broadened with a saturation intensity as low ...
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|Institutions:||Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Wilhelm Prettl|
|Keywords:||semiconductors - epitaxial GaAs - shallow donors - nonlinear photoconductivity - power broadening|
|Dewey Decimal Classification:||500 Science > 530 Physics|
|Refereed:||Yes, this version has been refereed|
|Created at the University of Regensburg:||Unknown|
|Deposited On:||26 Oct 2010 12:16|
|Last Modified:||13 Mar 2014 14:09|