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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-175026
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.17502
Alternative Links zum Volltext:DOI
Zusammenfassung
The saturation of the photoconductivity due to 1s-2p+ shallow donor transitions in n-GaAs has been investigated using a high power cw-FIR-laser. Magnetic field strengths were chosen in such a way that 2p+ energy levels were either below or above the N=0 conduction band Landau level. In the former case 1s-p+ transitions are found to be inhomogeneously broadened with a saturation intensity as low ...
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