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Impact ionization induced negative far-infrared photoconductivity inn-GaAs

Schöll, E. and Heisel, W. and Prettl, Wilhelm (1982) Impact ionization induced negative far-infrared photoconductivity inn-GaAs. Zeitschrift für Physik B: Condensed Matters 47 (4), pp. 285-291.

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Abstract

Far-infrared photoconductivity ofn-GaAs epitaxial layers showing impact ionization breakdown has been investigated by molecular lasers at photon energies below the 1s-2p shallow donor transition energy. Negative photoconductivity was observed if a magnetic field was applied to the crystals and if impact ionization of donors by the electric bias field was the dominant electron excitation ...

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Item Type:Article
Date:1982
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Wilhelm Prettl
Identification Number:
ValueType
10.1007/BF01313793DOI
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Owner: Universitätsbibliothek Regensburg
Deposited On:26 Oct 2010 12:19
Last Modified:13 Mar 2014 14:09
Item ID:17510
Owner Only: item control page

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