Schöll, E. and Heisel, W. and Prettl, Wilhelm
Impact ionization induced negative far-infrared photoconductivity inn-GaAs.
Zeitschrift für Physik B: Condensed Matters 47 (4), pp. 285-291.
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Far-infrared photoconductivity ofn-GaAs epitaxial layers showing impact ionization breakdown has been investigated by molecular lasers at photon energies below the 1s-2p shallow donor transition energy. Negative photoconductivity was observed if a magnetic field was applied to the crystals and if impact ionization of donors by the electric bias field was the dominant electron excitation ...
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