Impact ionization induced negative far-infrared photoconductivity inn-GaAs

Abstract

Far-infrared photoconductivity ofn-GaAs epitaxial layers showing impact ionization breakdown has been investigated by molecular lasers at photon energies below the 1s-2p shallow donor transition energy. Negative photoconductivity was observed if a magnetic field was applied to the crystals and if impact ionization of donors by the electric bias field was the dominant electron excitation mechanism. The experimental results are qualitatively explained on the basis of the generation-recombination kinetics of electrons bound to donors. Negative photoconductivity is attributed to optically induced free to bound transitions of electrons from theN=0 Landau band to donor levels shifted by the magnetic field above the low energy edge of the conduction band.