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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-175109
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.17510
Alternative Links zum Volltext:DOI
Zusammenfassung
Far-infrared photoconductivity ofn-GaAs epitaxial layers showing impact ionization breakdown has been investigated by molecular lasers at photon energies below the 1s-2p shallow donor transition energy. Negative photoconductivity was observed if a magnetic field was applied to the crystals and if impact ionization of donors by the electric bias field was the dominant electron excitation ...
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