Schöll, E. and Heisel, W. and Prettl, Wilhelm (1982) Impact ionization induced negative far-infrared photoconductivity inn-GaAs. Zeitschrift für Physik B: Condensed Matters 47 (4), pp. 285-291.
Far-infrared photoconductivity ofn-GaAs epitaxial layers showing impact ionization breakdown has been investigated by molecular lasers at photon energies below the 1s-2p shallow donor transition energy. Negative photoconductivity was observed if a magnetic field was applied to the crystals and if impact ionization of donors by the electric bias field was the dominant electron excitation ...
Export bibliographical data
|Institutions:||Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Wilhelm Prettl|
|Dewey Decimal Classification:||500 Science > 530 Physics|
|Created at the University of Regensburg:||Unknown|
|Deposited on:||26 Oct 2010 12:19|
|Last modified:||13 Mar 2014 14:09|