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Microscopic analysis of optical gain in InGaN/GaN quantum wells

Witzigmann, B. and Laino, V. and Luisier, M. and Schwarz, Uli and Feicht, Georg and Wegscheider, Werner and Engl, K. and Furitsch, M. and Leber, A. and Lell, A. and Härle, V. (2006) Microscopic analysis of optical gain in InGaN/GaN quantum wells. Applied Physics Letters 88, 021104.

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Abstract

A microscopic theory is used to analyze optical gain in InGaN/GaN quantum wells (QW). Experimental data are obtained from Hakki–Paoli measurements on edge-emitting lasers for different carrier densities. The simulations are based on the solution of the quantum kinetic Maxwell–Bloch equations, including many-body effects and a self-consistent treatment of piezoelectric fields. The results confirm ...

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Item Type:Article
Date:January 2006
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Ulrich Schwarz
Projects:Nanolux
Identification Number:
ValueType
10.1063/1.2164907DOI
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Owner: Redakteur Physik
Deposited On:20 Mar 2007
Last Modified:13 Mar 2014 10:03
Item ID:1767
Owner Only: item control page
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