Schliemann, John (2006) Theoretical study of interacting hole gas in p-doped bulk III-V semiconductors. Phys. Rev. B 74, 045214.
We study the homogeneous interacting hole gas in $p$-doped bulk III-V semiconductors. The structure of the valence band is modelled by Luttinger's Hamiltonian in the spherical approximation, giving rise to heavy and light hole dispersion branches, and the Coulomb repulsion is taken into account via a self-consistent Hartree-Fock treatment. As a nontrivial feature of the model, the self-consistent ...
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|Institutions:||Physics > Institute of Theroretical Physics > Chair Professor Grifoni > Group John Schliemann|
|Projects:||SFB 689: Spinphänomene in reduzierten Dimensionen|
|Dewey Decimal Classification:||500 Science > 530 Physics|
|Refereed:||Yes, this version has been refereed|
|Created at the University of Regensburg:||Yes|
|Deposited on:||20 Mar 2007|
|Last modified:||13 Mar 2014 10:04|