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Influence of an in situ-deposited SiN_x intermediate layer inside GaN and AlGaN layers on SiC substrates

Engl, Karl and Beer, Martin and Gmeinwieser, Nikolaus and Schwarz, Ulrich and Zweck, Josef and Wegscheider, Werner and Miller, S. and Miler, A. and Lugauer, H. and Brüderl, G. and Lell, A. and Härle, V. (2006) Influence of an in situ-deposited SiN_x intermediate layer inside GaN and AlGaN layers on SiC substrates. Journal of Crystal Growth 289 (1), pp. 6-13.

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Abstract

In this work we present a study on the influence of an in situ grown SiNx intermediate layer inside (Al)GaN epitaxial layers grown on SiC substrates on dislocation densities and material strain of the epitaxial films. A defect density of was achieved by reducing the number of pure edge dislocations in the order of one magnitude. It was found that a reduction of the dislocation density is only ...

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Item Type:Article
Date:March 2006
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Ulrich Schwarz
Physics > Institute of Experimental and Applied Physics > Chair Professor Back > Group Josef Zweck
Projects:Nanolux
Identification Number:
ValueType
10.1016/j.jcrysgro.2005.10.115DOI
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Owner: Webmaster Back
Deposited On:20 Mar 2007
Last Modified:13 Mar 2014 10:05
Item ID:1804
Owner Only: item control page

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