Gareev, Rashid and Bugoslavsky, Y. and Schreiber, R. and Paul, A. and Sperl, Matthias and Döppe, Matthias (2006) Carrier-induced ferromagnetism in Ge(Mn,Fe) magnetic semiconductor thin-film structures. Applied Physics Letters 88, p. 222508.
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We report on the carrier-induced ferromagnetism in Ge(Mn,Fe) magnetic semiconductor insulating-type thin-film structures prepared using sequential deposition at Tg=520 K with subsequent annealing at Tg. In the resulting films Mn and Fe are diffused in the Ge matrix without compromising the epitaxial structure. The anomalous Hall effect serves as a manifestation of the carrier-induced magnetism, with p-type conductivity and the Curie temperature TC=209 K. The additional doping with Fe stabilizes epitaxial growth and carrier-mediated magnetism at levels of magnetic doping exceeding 10%. We conclude that indirect ferromagnetic exchange is mediated by localized holes with concentration n1020 cm–3 and mobility µ10 cm2/(V s).
|Institutions:|| Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss|
Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Günther Bayreuther
|Projects:||SFB 689: Spinphänomene in reduzierten Dimensionen|
|Subjects:||500 Science > 530 Physics|
|Refereed:||Yes, this version has been refereed|
|Created at the University of Regensburg:||Yes|
|Deposited On:||20 Mar 2007|
|Last Modified:||20 Jul 2011 21:02|