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Carrier-induced ferromagnetism in Ge(Mn,Fe) magnetic semiconductor thin-film structures

Gareev, Rashid and Bugoslavsky, Y. and Schreiber, R. and Paul, A. and Sperl, Matthias and Döppe, Matthias (2006) Carrier-induced ferromagnetism in Ge(Mn,Fe) magnetic semiconductor thin-film structures. Applied Physics Letters 88, p. 222508.

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Abstract

We report on the carrier-induced ferromagnetism in Ge(Mn,Fe) magnetic semiconductor insulating-type thin-film structures prepared using sequential deposition at Tg=520 K with subsequent annealing at Tg. In the resulting films Mn and Fe are diffused in the Ge matrix without compromising the epitaxial structure. The anomalous Hall effect serves as a manifestation of the carrier-induced magnetism, with p-type conductivity and the Curie temperature TC=209 K. The additional doping with Fe stabilizes epitaxial growth and carrier-mediated magnetism at levels of magnetic doping exceeding 10%. We conclude that indirect ferromagnetic exchange is mediated by localized holes with concentration n ${\approx}$ 1020 cm–3 and mobility µ ${\approx}$ 10 cm2/(V s).