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Carrier-induced ferromagnetism in Ge(Mn,Fe) magnetic semiconductor thin-film structures

Gareev, Rashid and Bugoslavsky, Y. and Schreiber, R. and Paul, A. and Sperl, Matthias and Döppe, Matthias (2006) Carrier-induced ferromagnetism in Ge(Mn,Fe) magnetic semiconductor thin-film structures. Applied Physics Letters 88, p. 222508.

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Abstract

We report on the carrier-induced ferromagnetism in Ge(Mn,Fe) magnetic semiconductor insulating-type thin-film structures prepared using sequential deposition at Tg=520 K with subsequent annealing at Tg. In the resulting films Mn and Fe are diffused in the Ge matrix without compromising the epitaxial structure. The anomalous Hall effect serves as a manifestation of the carrier-induced ...

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Item Type:Article
Date:May 2006
Institutions:Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss
Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Günther Bayreuther
Projects:SFB 689: Spinphänomene in reduzierten Dimensionen
Identification Number:
ValueType
10.1063/1.2208552DOI
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Owner: Webmaster Back
Deposited On:20 Mar 2007
Last Modified:13 Mar 2014 10:05
Item ID:1811
Owner Only: item control page
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