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Resonant tunneling magnetoresistance in antiferromagnetically coupled Fe-based structures with multilayered Si/Ge spacers

Gareev, Rashid and Weides, Martin and Schreiber, Reinert and Poppe, Ulrich (2006) Resonant tunneling magnetoresistance in antiferromagnetically coupled Fe-based structures with multilayered Si/Ge spacers. Applied Physics Letters 88, p. 172105.

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Abstract

We report on the experimental evidence of the tunneling magnetoresistance (TMR) effect near 3% and its inversion in strongly antiferromagnetically coupled Fe (001)/([Si(0.2 nm)/Ge(0.2 nm)]*5)/Fe epitaxial structures with diffused interfaces. We explain the inversion of TMR with biasing voltage by resonant tunneling across impurity states with weak spin split E${\approx}$10 meV and ...

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Item Type:Article
Date:April 2006
Institutions:Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss
Projects:SFB 689: Spinphänomene in reduzierten Dimensionen
Identification Number:
ValueType
10.1063/1.2198812DOI
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Owner: Redakteur Physik
Deposited On:20 Mar 2007
Last Modified:13 Mar 2014 10:05
Item ID:1812
Owner Only: item control page

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