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Resonant tunneling magnetoresistance in antiferromagnetically coupled Fe-based structures with multilayered Si/Ge spacers

Gareev, Rashid and Weides, Martin and Schreiber, Reinert and Poppe, Ulrich (2006) Resonant tunneling magnetoresistance in antiferromagnetically coupled Fe-based structures with multilayered Si/Ge spacers. Applied Physics Letters 88, p. 172105.

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Abstract

We report on the experimental evidence of the tunneling magnetoresistance (TMR) effect near 3% and its inversion in strongly antiferromagnetically coupled Fe (001)/([Si(0.2 nm)/Ge(0.2 nm)]*5)/Fe epitaxial structures with diffused interfaces. We explain the inversion of TMR with biasing voltage by resonant tunneling across impurity states with weak spin split E ${\approx}$ 10 meV and spin-dependent filtering in the spacer layer. The resonant tunneling is manifested in spin-dependent resonances close to zero biasing voltages related to antiferromagnetic coupling across impurity states.