Tse, Wang-Kong and Fabian, Jaroslav and Zutic, Igor and Sarma, S. Das (2005) Spin accumulation in the extrinsic spin Hall effect. Physical Review B 72, p. 241303.
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Other URL: http://link.aps.org/abstract/PRB/v72/e241303
The drift-diffusion formalism for spin-polarized carrier transport in semiconductors is generalized to include spin-orbit coupling. The theory is applied to treat the extrinsic spin Hall effect using realistic boundary conditions. It is shown that carrier and spin-diffusion lengths are modified by the presence of spin-orbit coupling and that spin accumulation due to the extrinsic spin Hall effect is strongly and qualitatively influenced by boundary conditions. Analytical formulas for the spin-dependent carrier recombination rates and inhomogeneous spin densities and currents are presented.
|Institutions:||Physics > Institute of Theroretical Physics > Chair Professor Richter > Group Jaroslav Fabian|
|Projects:||US ONR: Spin information processing and quantum computing|
|Subjects:||500 Science > 530 Physics|
|Refereed:||Yes, this version has been refereed|
|Created at the University of Regensburg:||Yes|
|Owner:||Prof. Dr. Jaroslav Fabian|
|Deposited On:||20 Mar 2007|
|Last Modified:||20 Jul 2011 21:02|