Zutic, Igor and Fabian, Jaroslav and Sarma, S. Das (2001) Spin injection through the depletion layer: A theory of spin-polarized p-n junctions and solar cells. Physical Review B 64 (12), 121201(R).
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Other URL: http://link.aps.org/abstract/PRB/v64/e121201
A drift-diffusion model for spin-charge transport in spin-polarized p-n junctions is developed and solved numerically for a realistic set of material parameters based on GaAs. It is demonstrated that spin polarization can be injected through the depletion layer by both minority and majority carriers, making all semiconductor devices such as spin-polarized solar cells and bipolar transistors feasible. Spin-polarized p-n junctions allow for spin-polarized current generation, spin amplification, voltage control of spin polarization, and a significant extension of spin diffusion range.
|Institutions:||Physics > Institute of Theroretical Physics > Chair Professor Richter > Group Jaroslav Fabian|
|Subjects:||500 Science > 530 Physics|
|Refereed:||Yes, this version has been refereed|
|Created at the University of Regensburg:||Yes|
|Owner:||Prof. Dr. Jaroslav Fabian|
|Deposited On:||20 Mar 2007|
|Last Modified:||20 Jul 2011 21:03|