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Tunneling Anisotropic Magnetoresistance and Spin-Orbit Coupling in Fe/GaAs/Au Tunnel Junctions

Moser, Jürgen and Matos-Abiague, Alex and Schuh, Dieter and Wegscheider, Werner and Fabian, Jaroslav and Weiss, Dieter (2007) Tunneling Anisotropic Magnetoresistance and Spin-Orbit Coupling in Fe/GaAs/Au Tunnel Junctions. Physical Review Letters (PRL) 99 (5), 056601.

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Abstract

We report the observation of tunneling anisotropic magnetoresistance effect (TAMR) in the epitaxial metal-semiconductor system Fe/GaAs/Au. The observed two-fold anisotropy of the resistance can be switched by reversing the bias voltage, suggesting that the effect originates from the interference of the spin-orbit coupling at the interfaces. Corresponding model calculations reproduce the experimental findings very well.

Item Type:Article
Institutions: Physics > Institute of Theroretical Physics > Chair Professor Richter > Group Jaroslav Fabian
Projects:SFB 689: Spinphänomene in reduzierten Dimensionen
Identification Number:
ValueType
cond-mat?papernum=0611406arXiv ID
Related URLs:
URLURL Type
http://arxiv.org/abs/cond-mat?papernum=0611406Preprint
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Owner:Prof. Dr. Jaroslav Fabian
Deposited On:20 Mar 2007
Last Modified:20 Jul 2011 23:04
Item ID:1892
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