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Tunneling Anisotropic Magnetoresistance and Spin-Orbit Coupling in Fe/GaAs/Au Tunnel Junctions

Moser, Jürgen and Matos-Abiague, Alex and Schuh, Dieter and Wegscheider, Werner and Fabian, Jaroslav and Weiss, Dieter (2007) Tunneling Anisotropic Magnetoresistance and Spin-Orbit Coupling in Fe/GaAs/Au Tunnel Junctions. Physical Review Letters (PRL) 99 (5), 056601.

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We report the observation of tunneling anisotropic magnetoresistance effect (TAMR) in the epitaxial metal-semiconductor system Fe/GaAs/Au. The observed two-fold anisotropy of the resistance can be switched by reversing the bias voltage, suggesting that the effect originates from the interference of the spin-orbit coupling at the interfaces. Corresponding model calculations reproduce the experimental findings very well.

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Item type:Article
Date:December 2007
Institutions:Physics > Institute of Theroretical Physics > Chair Professor Richter > Group Jaroslav Fabian
Projects:SFB 689: Spinphänomene in reduzierten Dimensionen
Identification Number:
cond-mat?papernum=0611406arXiv ID
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Dewey Decimal Classification:500 Science > 530 Physics
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Deposited on:20 Mar 2007
Last modified:13 Mar 2014 10:08
Item ID:1892
Owner only: item control page


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