Raith, Martin and Stano, Peter and Fabian, Jaroslav (2011) Theory of single electron spin relaxation in Si/SiGe lateral coupled quantum dots. Physical Review B (PRB) 83 (19), p. 195318.
Download (1MB) - Registered users only
We investigate the spin relaxation induced by acoustic phonons in the presence of spin-orbit interactions in single electron Si/SiGe lateral coupled quantum dots. The relaxation rates are computed numerically in single and double quantum dots, in in-plane and perpendicular magnetic fields. The deformation potential of acoustic phonons is taken into account for both transverse and longitudinal ...
Export bibliographical data
|Date:||13 May 2011|
|Institutions:||Physics > Institute of Theroretical Physics > Chair Professor Richter > Group Jaroslav Fabian|
|Projects:||Spins in Silicon quantum dots|
|Research groups and research centres:||Not selected|
|Keywords:||Silicon, Quantum dots, Spin Relaxation, Lifetime|
|Subjects:||500 Science > 530 Physics|
|Refereed:||Yes, this version has been refereed|
|Created at the University of Regensburg:||Yes|
|Owner:||Dr. Martin Raith|
|Deposited On:||21 Jan 2011 14:07|
|Last Modified:||13 Mar 2014 17:23|