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Theory of single electron spin relaxation in Si/SiGe lateral coupled quantum dots

Raith, Martin and Stano, Peter and Fabian, Jaroslav (2011) Theory of single electron spin relaxation in Si/SiGe lateral coupled quantum dots. Physical Review B (PRB) 83 (19), p. 195318.

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Other URL: http://prb.aps.org/abstract/PRB/v83/i19/e195318, http://arxiv.org/abs/1101.3858


Abstract

We investigate the spin relaxation induced by acoustic phonons in the presence of spin-orbit interactions in single electron Si/SiGe lateral coupled quantum dots. The relaxation rates are computed numerically in single and double quantum dots, in in-plane and perpendicular magnetic fields. The deformation potential of acoustic phonons is taken into account for both transverse and longitudinal ...

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Item Type:Article
Date:13 May 2011
Institutions:Physics > Institute of Theroretical Physics > Chair Professor Richter > Group Jaroslav Fabian
Projects:Spins in Silicon quantum dots
Research groups and research centres:Not selected
Identification Number:
ValueType
10.1103/PhysRevB.83.195318DOI
Related URLs:
URLURL Type
http://www.physik.uni-regensburg.de/forschung/fabian/Author
Classification:
NotationType
03.67.Lx, 71.70.Ej, 72.25.Rb, 73.21.La, 73.22.Dj, 85.35.GvPACS
Keywords:Silicon, Quantum dots, Spin Relaxation, Lifetime
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Owner: Dr. Martin Raith
Deposited On:21 Jan 2011 14:07
Last Modified:13 Mar 2014 17:23
Item ID:19095
Owner Only: item control page

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